FCC E6A - 电路元件与半导体

#E6A01🔗

In what application is gallium arsenide used as a semiconductor material?

砷化镓作为半导体材料有哪些应用？

In high-current rectifier circuits

在大电流整流电路中

In high-power audio circuits

在大功率音频电路中

In microwave circuits

在微波电路中

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In very low-frequency RF circuits

在极低频射频电路中

#E6A02🔗

Which of the following semiconductor materials contains excess free electrons?

以下哪种半导体材料含有多余的自由电子？

N-type

N型

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P-type

P型

Bipolar

双极性

Insulated gate

绝缘栅

#E6A03🔗

Why does a PN-junction diode not conduct current when reverse biased?

为什么 PN 结二极管反向偏置时不导通电流？

Only P-type semiconductor material can conduct current

只有P型半导体材料才能导电

Only N-type semiconductor material can conduct current

只有N型半导体材料才能导电

Holes in P-type material and electrons in the N-type material are separated by the applied voltage , widening the depletion region

P型材料中的空穴和N型材料中的电子被施加的电压分开，加宽了耗尽区

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Excess holes in P-type material combine with the electrons in N-type material, converting the entire diode into an insulator

P型材料中多余的空穴与N型材料中的电子结合，将整个二极管转变为绝缘体

#E6A04🔗

What is the name given to an impurity atom that adds holes to a semiconductor crystal structure?

在半导体晶体结构中添加空穴的杂质原子叫什么名字？

Insulator impurity

绝缘体杂质

N-type impurity

N型杂质

Acceptor impurity

受主杂质

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Donor impurity

供体杂质

#E6A05🔗

How does DC input impedance at the gate of a field-effect transistor (FET) compare with that of a bipolar transistor?

场效应晶体管 (FET) 栅极的直流输入阻抗与双极晶体管的直流输入阻抗相比如何？

They are both low impedance

它们都是低阻抗

An FET has lower input impedance

FET 具有较低的输入阻抗

An FET has higher input impedance

FET 具有更高的输入阻抗

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They are both high impedance

它们都是高阻抗

#E6A06🔗

What is the beta of a bipolar junction transistor?

双极结型晶体管的贝塔值是多少？

The frequency at which the current gain is reduced to 0.707

电流增益降低至 0.707 时的频率

The change in collector current with respect to the change in base current

集电极电流的变化相对于基极电流的变化

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The breakdown voltage of the base-to-collector junction

基极-集电极结的击穿电压

The switching speed

开关速度

#E6A07🔗

Which of the following indicates that a silicon NPN junction transistor is biased on?

以下哪项表明硅 NPN 结晶体管处于偏置状态？

Base-to-emitter resistance of approximately 6 ohms to 7 ohms

基极至发射极电阻约为 6 欧姆至 7 欧姆

Base-to-emitter resistance of approximately 0.6 ohms to 0.7 ohms

基极至发射极电阻约为 0.6 欧姆至 0.7 欧姆

Base-to-emitter voltage of approximately 6 volts to 7 volts

基极至发射极电压约为 6 伏至 7 伏

Base-to-emitter voltage of approximately 0.6 volts to 0.7 volts

基极至发射极电压约为 0.6 伏至 0.7 伏

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#E6A08🔗

What is the term for the frequency at which the grounded-base current gain of a bipolar junction transistor has decreased to 0.7 of the gain obtainable at 1 kHz?

双极结型晶体管的接地基极电流增益降至 1 kHz 时增益的 0.7 时的频率术语是什么？

Corner frequency

转角频率

Alpha rejection frequency

阿尔法抑制频率

Beta cutoff frequency

贝塔截止频率

Alpha cutoff frequency

阿尔法截止频率

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#E6A09🔗

What is a depletion-mode field-effect transistor (FET)?

什么是耗尽型场效应晶体管 (FET)？

An FET that exhibits a current flow between source and drain when no gate voltage is applied

当未施加栅极电压时，在源极和漏极之间呈现电流的 FET

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An FET that has no current flow between source and drain when no gate voltage is applied

当没有施加栅极电压时，源极和漏极之间没有电流流动的 FET

An FET that exhibits very high electron mobility due to a lack of holes in the N-type material

由于 N 型材料中缺乏空穴，FET 表现出非常高的电子迁移率

An FET for which holes are the majority carriers

空穴为多数载流子的 FET

#E6A10🔗

In Figure E6-1, which is the schematic symbol for an N-channel dual-gate MOSFET?

在图 E6-1中，哪个是N沟道双栅极MOSFET的原理图符号？

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#E6A11🔗

In Figure E6-1, which is the schematic symbol for a P-channel junction FET?

在图 E6-1 中，哪个是 P 沟道结型 FET 的原理图符号？

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#E6A12🔗

What is the purpose of connecting Zener diodes between a MOSFET gate and its source or drain?

在 MOSFET 栅极与其源极或漏极之间连接齐纳二极管的目的是什么？

To provide a voltage reference for the correct amount of reverse-bias gate voltage

为正确的反向偏置栅极电压提供电压参考

To protect the substrate from excessive voltages

保护基板免受过高电压的影响

To keep the gate voltage within specifications and prevent the device from overheating

将栅极电压保持在规格范围内并防止器件过热

To protect the gate from static damage

保护门免受静电损坏

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FCC E6A - 电路元件与半导体

小节 E6A：电路元件与半导体